|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
DISCRETE SEMICONDUCTORS M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 1998 Jul 06 Philips Semiconductors Product specification UHF power transistor FEATURES * High power gain * High efficiency * 1.9 GHz operating area * Linear and non-linear operation. APPLICATIONS * Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. * Driver for DCS1800, 1900. DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. 2 Top view 1 MSB842 BFG21W PINNING PIN 1, 3 2 4 base collector DESCRIPTION emitter handbook, halfpage 3 4 Marking code: P1. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter test circuit. MODE OF OPERATION Pulsed class-AB; < 1 : 2; tp = 5 ms f (GHz) 1.9 VCE (V) 3.6 PL (dBm) 26 Gp (dB) 10 C (%) typ.55 1998 Jul 06 2 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the emitter pins. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts 60 C; Ptot = 600 mW; note 1 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts 60 C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - MIN. BFG21W MAX. 15 4.5 1 500 600 +150 150 V V V UNIT mA mW C C VALUE 150 UNIT K/W 103 handbook, full pagewidth Rth (K/W) = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 0 tp T 1 10-6 10-5 10-4 10-3 10-2 10-1 t P MGM219 102 = tp T tp (s) 1 At temperature stabilization solder point has been reached. Fig.2 Transient thermal resistance as a function of pulse time; typical values. 1998 Jul 06 3 Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)CER V(BR)EBO ICES hFE Cc Cre fT PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance transition frequency CONDITIONS open emitter; IC = 0.1 mA open base; IC = 10 mA RBE < 1 k, IC = 10 mA open collector; IE = 0.1 mA VCE = 5 V; VBE = 0 IC = 200 mA; VCE = 2 V IE = ie= 0; VCB = 3 V; f = 1 MHz IC = 0; VCB = 3.6 V; f = 1 MHz IC = 200 mA; VCE = 3.6 V; f = 700 MHz MIN. 15 4.5 10 1 - 40 - - 18 BFG21W MAX. - - - - 10 100 3 1.5 - UNIT V V V V A pF pF GHz APPLICATION INFORMATION RF performance at Ts 60 C in a common emitter test circuit (see Figs 4 and 5). MODE OF OPERATION Pulsed; class-AB; < 1 : 2; tp = 5 ms f (GHz) 1.9 VCE (V) 3.6 ICQ (mA) 1 PL (dBm) 26 Gp (dB) 10 C (%) typ. 55 Ruggedness in class-AB operation The transistor is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases at 26 dBm output power under pulsed conditions: = 1 : 2; tp = 5 ms; f = 1.9 GHz at VCE = 4.5 V. MGM220 handbook, halfpage 16 80 C (%) 60 Gp (dB) 12 Gp 8 C 40 4 20 0 5 10 15 20 0 25 30 PL (dBm) Pulsed, class-AB operation; < 1 : 2; tp = 5 ms. f = 1.9 GHz; VCE = 3.6 V; ICQ = 1 mA; tuned at PL = 26 dBm. Fig.3 Power gain and collector efficiency as a function of the load power; typical values. 1998 Jul 06 4 Philips Semiconductors Product specification UHF power transistor BFG21W handbook, full pagewidth VC R1 R2 VS L5 R3 C7 TR1 C3 C6 L4 L1 RF input 50 C1 C2 L2 DUT C4 MGM221 L3 C5 RF output 50 Fig.4 Common emitter test circuit for class-AB operation at 1.9 GHz. List of components used in test circuit (see Figs 4 and 5) COMPONENT C1, C5 C2 C3, C6 C4 C7 L1, L4 L2 L3 L5 R1 R2, R3 TR1 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (r = 6.15, tan = 0.0019); thickness 0.64 mm, copper cladding = 35 m. DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor, note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 stripline; note 2 stripline; note 2 stripline; note 2 Grade 4S2 Ferroxcube chip bead metal film resistor metal film resistor NPN transistor 220 ; 0.4 W 10 ; 0.4 W BC817 9335 895 20215 VALUE 24 pF 3.3 pF 15 pF 2.4 pF 1 nF 100 50 50 18 x 0.2 mm 3.2 x 0.8 mm 4.6 x 0.8 mm 4330 030 36300 DIMENSIONS CATALOGUE No. 1998 Jul 06 5 Philips Semiconductors Product specification UHF power transistor BFG21W handbook, full pagewidth 45 35 VC TR1 R2 R1 VS L5 R3 C7 C6 L1 C2 L4 C5 L3 DUT C4 output C3 C1 L2 input MGM222 Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.5 Printed-circuit board and component lay-out for 1.9 GHz class-AB test-circuit in Fig.4. 1998 Jul 06 6 Philips Semiconductors Product specification UHF power transistor BFG21W MGM223 handbook, halfpage 10 Zi 8 handbook, halfpage Z () ri 16 L () 12 MGM224 RL 8 6 xi 4 0 2 XL 4 -4 -8 1.8 0 1.8 1.85 1.9 1.95 f (GHz) 2.0 1.85 1.9 1.95 f (GHz) 2.0 VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts 60 C. VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts 60 C. Fig.6 Input impedance as function of frequency (series components); typical values. Fig.7 Load impedance as a function of frequency (series components); typical values. 1998 Jul 06 7 Philips Semiconductors Product specification UHF power transistor PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads BFG21W SOT343R D B E A X y HE e vMA 3 4 Q A A1 c 2 wM B bp e1 b1 1 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT343R REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-21 1998 Jul 06 8 Philips Semiconductors Product specification UHF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFG21W This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Jul 06 9 Philips Semiconductors Product specification UHF power transistor NOTES BFG21W 1998 Jul 06 10 Philips Semiconductors Product specification UHF power transistor NOTES BFG21W 1998 Jul 06 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 Internet: http://www.semiconductors.philips.com For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125104/00/03/pp12 Date of release: 1998 Jul 06 Document order number: 9397 750 03971 |
Price & Availability of BFG21W |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |